Toshiba Completes New 300-Millimeter Wafer Fabrication Facility for Power Semiconductors
2024年5月23日 - 3:41PM
ビジネスワイヤ(英語)
Toshiba Electronic Devices & Storage Corporation (“Toshiba”)
today held a ceremony to mark the completion of a new
300-millimeter wafer fabrication facility for power semiconductors
and an office building at Kaga Toshiba Electronics Corporation in
Ishikawa Prefecture, Japan, one of Toshiba’s key group companies.
The completion of construction is a major milestone for Phase 1 of
Toshiba’s multi-year investment program. Toshiba will now proceed
with equipment installation, toward starting mass production in the
second half of fiscal year 2024. Once Phase 1 reaches full-scale
operation, Toshiba’s production capacity for power semiconductors,
mainly MOSFETs[1] and IGBTs[2], will be 2.5 times that of fiscal
2021, when the investment plan was made[3]. Decisions on the
construction and start of operation of Phase 2 will reflect market
trends.
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Right: Phase 1 of the new fabrication
facility, foreground: the new office building (Photo: Business
Wire)
The new manufacturing building follows and will make a major
contribution to Toshiba’s Business Continuity Plan (BCP): it has a
seismic isolation structure that absorbs earthquake shock and
redundant power sources. Energy from renewable source and solar
panels on the roof of the building (onsite PPA model) will allow
the facility to meet 100% of its power requirement with renewable
energy.
Product quality and production efficiency will be boosted by the
use of artificial intelligence (AI). Toshiba expects to receive a
grant from the Ministry of Economy, Trade and Industry of Japan to
subsidize its investment in part of the manufacturing
equipment.
Power semiconductors play a crucial role in electricity supply
and control, and are essential devices for energy efficiency in all
electrical equipment. With the continuing electrification of
automobiles and the automation of industrial machinery, they are
expected to see continued robust demand growth. Toshiba started
power semiconductor production on a new 300-millimeter wafer line
in the second half of fiscal 2022 at Kaga Toshiba Electronics’
existing facility. Going forward, the company will expand
production with the new fab and further contribute to carbon
neutrality.
[1] Metal-Oxide-Semiconductor Field-Effect Transistor [2]
Insulated Gate Bipolar Transistor [3] The total of 200- and
300-millimeter wafer fabrication capacity (200-millimeter
equivalent)
Overview of Kaga Toshiba Electronics Corporation
Location: 1-1, Iwauchi-machi, Nomi-shi, Ishikawa Prefecture,
Japan Established: December, 1984 President and Representative
Director: Satoshi Aida Employees: 1,150 (as of March 31, 2024) Main
Products: Discrete semiconductors (power semiconductors,
small-signal devices and optoelectronic devices) Web:
https://www.toshiba-kaga.co.jp/ (Japanese only)
* Information in this document, including product prices and
specifications, content of services and contact information, is
current and believed to be accurate as of the date of the
announcement, but is subject to change without prior notice. *
Company names, product names, and service names mentioned herein
may be trademarks of their respective companies.
About Toshiba Electronic Devices & Storage
Corporation
Toshiba Electronic Devices & Storage Corporation, a leading
supplier of advanced semiconductor and storage solutions, draws on
over half a century of experience and innovation to offer customers
and business partners outstanding discrete semiconductors, system
LSIs and HDD products.
Find out more at
https://toshiba.semicon-storage.com/ap-en/top.html
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