onsemi Accelerates Silicon Carbide Innovation to Power the Transition to Electrification
2024年7月18日 - 7:00PM
ビジネスワイヤ（英語）
Introduces latest generation EliteSiC M3e
MOSFETs that significantly improve energy efficiency for
power-hungry applications
NEWS HIGHLIGHTS
- Latest generation EliteSiC M3e MOSFETs decrease turn-off losses
by up to 50% for electrification applications
- Platform uniquely achieves a reduction in both conduction and
switching losses on the field-proven planar architecture
- When combined with onsemi’s portfolio of intelligent power
products, the EliteSiC M3e can deliver further optimized system
solutions and reduce time-to-market
- onsemi unveiled plans to introduce multiple future generations
of silicon carbide at an accelerated pace through 2030
In the face of escalating climate crises and a
dramatic rise in global energy demands, governments and industries
are committing to ambitious climate goals aimed at mitigating
environmental impact and securing a sustainable future. Key to
these efforts is the transition to electrification to reduce carbon
emissions and embrace renewable energy resources. In a significant
step towards accelerating this global transition, onsemi
(Nasdaq: ON) introduced its latest generation silicon carbide
technology platform, EliteSiC M3e MOSFETs. The company also
disclosed plans to release multiple additional generations through
2030.
This press release features multimedia. View
the full release here:
https://www.businesswire.com/news/home/20240718262013/en/
onsemi's EliteSiC M3e MOSFETs accelerate
the pace of innovation for power semiconductors (Graphic: Business
Wire)
“The future of electrification is dependent on advanced power
semiconductors. Today’s infrastructure cannot keep up with the
world’s demands for more intelligence and electrified mobility
without significant innovations in power. This is critical to the
ability to achieve global electrification and stop climate change,”
said Simon Keeton, group president, Power Solutions Group, onsemi.
“We are setting the pace for innovation, with plans to
significantly increase power density in our silicon carbide
technology roadmap through 2030 to be able to meet the growing
demands for energy and enable the global transition to
electrification.”
The EliteSiC M3e MOSFETs will play a fundamental role in
enabling the performance and reliability of next-generation
electrical systems at lower cost per kW, thus influencing the
adoption and effectiveness of electrification initiatives. With the
ability to operate at higher switching frequencies and voltages
while minimizing power conversion losses, this platform is
essential for a wide range of automotive and industrial
applications such as electric vehicle powertrains, DC fast
chargers, solar inverters and energy storage solutions.
Additionally, the EliteSiC M3e MOSFETs will enable the transition
to more efficient, higher-power data centers to meet the
exponentially increasing energy demands that power a sustainable
artificial intelligence engine.
Trusted Platform Delivers Generational Efficiency
Leap
Through onsemi’s unique design engineering and manufacturing
capabilities, the EliteSiC M3e MOSFETs achieve a significant
reduction in both conduction and switching losses on the trusted
and field-proven planar architecture. Compared to previous
generations, the platform can reduce conduction losses by 30% and
turn-off losses by up to 50%1. By extending the life of SiC planar
MOSFETs and delivering industry-leading performance with EliteSiC
M3e technology, onsemi can ensure the robustness and stability of
the platform, making it a preferred choice for critical
electrification applications.
The EliteSiC M3e MOSFETs also offer the industry’s lowest
specific on-resistance (RSP) with short circuit capability which is
critical for the traction inverter market that dominates SiC
volume. Packaged in onsemi’s state-of-the-art discrete and power
modules, the 1200V M3e die delivers substantially more phase
current than previous EliteSiC technology, resulting in
approximately 20% more output power in the same traction inverter
housing. Conversely, a fixed power level can now be designed with
20% less SiC content, saving costs while enabling the design of
smaller, lighter and more reliable systems.
Additionally, onsemi provides a broader portfolio of intelligent
power technologies including gate drivers, DC-DC converters,
e-Fuses and more to pair with the EliteSiC M3e platform. The
end-end onsemi combination of optimized, co-engineered power
switches, drivers and controllers enable advanced features via
integration, lowering overall system cost.
Accelerating the Future of Power
Global energy demands are projected to soar over the next
decade, making the need for increased power density in
semiconductors paramount. onsemi is leading innovation across its
silicon carbide roadmap – from die architectures to novel packaging
techniques – that will continue to address the general industry
demand for increased power density.
With each new generation of silicon carbide, cell structures
will be optimized to efficiently push more current through a
smaller area, increasing power density. When coupled with the
company’s advanced packaging techniques, onsemi will be able to
maximize performance and reduce package size. By applying the
concepts of Moore’s Law to the development of silicon carbide,
onsemi can develop multiple generations in parallel and accelerate
its roadmap to bring several new EliteSiC products to market at an
accelerated pace through 2030.
“We are applying our decades of experience in power
semiconductors to push the boundaries of speed and innovation in
our engineering and manufacturing capabilities to meet the rising
global energy demands,” said Dr. Mrinal Das, senior director of
technical marketing, Power Solutions Group, onsemi. “There is a
huge technical interdependency between the materials, device and
package in silicon carbide. Having full ownership over these key
aspects allows us to have control over the design and manufacturing
process and bring new generations to market much faster.”
The EliteSiC M3e MOSFET in the industry-standard TO-247-4L
package is now sampling.
More Information:
- EliteSiC M3e Product Page
- EliteSiC Technology Page
- Future Proofing Your Silicon Carbide Design: A Guide for
Automotive Manufacturers
- System Solution Guides
- Reliable Supply of Silicon Carbide - The onsemi difference
About onsemi
onsemi (Nasdaq: ON) is driving disruptive innovations to
help build a better future. With a focus on automotive and
industrial end-markets, the company is accelerating change in
megatrends such as vehicle electrification and safety, sustainable
energy grids, industrial automation, and 5G and cloud
infrastructure. onsemi offers a highly differentiated and
innovative product portfolio, delivering intelligent power and
sensing technologies that solve the world’s most complex challenges
and leads the way to creating a safer, cleaner and smarter world.
onsemi is recognized as a Fortune 500® company and included in the
Nasdaq-100 Index® and S&P 500® index. Learn more about onsemi
at www.onsemi.com.
1 Based on internal testing when compared to the EliteSiC M3T
MOSFETs
onsemi and the onsemi logo are trademarks of Semiconductor
Components Industries, LLC. All other brand and product names
appearing in this document are registered trademarks or trademarks
of their respective holders.
View source
version on businesswire.com: https://www.businesswire.com/news/home/20240718262013/en/
Krystal Heaton Director, Head of Public Relations onsemi
(480) 242-6943 Krystal.Heaton@onsemi.com
ON Semiconductor (NASDAQ:ON)
過去 株価チャート
から 6 2024 まで 7 2024
ON Semiconductor (NASDAQ:ON)
過去 株価チャート
から 7 2023 まで 7 2024
