Navitas Delivers Grid-Connected Energy with 3.3 kV SiC and Bi-directional GaN ICs at PE International 2024
2024年3月27日 - 9:30PM
Navitas Semiconductor (Nasdaq: NVTS), the only pure-play,
next-generation power semiconductor company and industry leader in
gallium nitride (GaN) power ICs and silicon carbide (SiC)
technology, has announced its participation in the upcoming Power
Electronics International conference on April 16th- 17th 2024, in
Brussels, Belgium.
Grid reliability is a key factor in a $1.3 trillion power
semiconductor opportunity as Navitas’ technologies accelerate the
transition from fossil fuels to renewable energies. Navitas will
introduce the latest GaNFast™ and GeneSiC™ products to the European
audience, including new Gen-3 Fast SiC for high-power and
higher-speed performance, plus GaNSafe™ - the world’s most
protected GaN power devices.
Navitas will present the following on April 17th:
"3.3 kV SiC MOSFETs Accelerate Grid-Connected Energy Storage,"
Dr. Ranbir Singh, EVP GeneSiC
Synopsis: The grid supplies energy from generators and delivers
it to customers via transmission and distribution (T&D)
networks. In the U.S., the use of electricity storage to support
and optimize T&D has been limited due to high storage costs and
limited design and operational experience. Recent improvements in
storage and power technologies, however, coupled with changes in
the marketplace, herald an era of expanding opportunity for
electricity storage. SiC inverters will revolutionize electricity
delivery, renewable energy integration, and energy storage. It is
well-recognized that silicon-based semiconductors have inherent
limitations that reduce their suitability for utility-scale
applications.
"Bi-directional circuits open up new opportunities in off-grid
applications," Alfred Hesener, Senior Director Industrial and
Consumer Applications
Synopsis: Bi-directional circuits are critical to effectively
smooth the supply/demand variation in renewable energy
applications. In the past, they were expensive to make and complex
to implement in power electronics applications. Wide bandgap GaN
power ICs with integrated drive and advanced circuit functions
deliver easy-to-use, reliable, high power density, and
functionality for power factor correction circuits, solar
inverters, and solid-state circuit breakers.
To meet with Navitas at PE International, contact
eurosales@navitassemi.com.
About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play,
next-generation power-semiconductor company, celebrating 10
years of power innovation founded in 2024. GaNFast™ power
ICs integrate gallium nitride (GaN) power and drive, with
control, sensing, and protection to enable faster charging, higher
power density, and greater energy savings.
Complementary GeneSiC™ power devices are optimized
high-power, high-voltage, and high-reliability silicon carbide
(SiC) solutions. Focus markets include EV, solar, energy storage,
home appliance / industrial, data center, mobile and consumer. Over
250 Navitas patents are issued or pending. As of August 2023, over
125 million GaN and 12 million SiC units have been shipped, and
with the industry’s first and only 20-year GaNFast warranty.
Navitas was the world’s first semiconductor company to
be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GaNSense, GeneSiC and the
Navitas logo are trademarks or registered trademarks of Navitas
Semiconductor Limited and affiliates. All other brands, product
names and marks are or may be trademarks or registered trademarks
used to identify products or services of their respective
owners.
Contact:
Stephen Oliver, VP Corporate Marketing & Investor
Relations
ir@navitassemi.com
A photo accompanying this announcement is available at
https://www.globenewswire.com/NewsRoom/AttachmentNg/ce33a5c7-55e8-46b4-8a94-5fdba9b07127
Navitas Semiconductor (NASDAQ:NVTS)
過去 株価チャート
から 3 2025 まで 4 2025
Navitas Semiconductor (NASDAQ:NVTS)
過去 株価チャート
から 4 2024 まで 4 2025