Transphorm at APEC 2024: SuperGaN Innovation for Low to High Power Applications
2024年2月6日 - 10:30PM
ビジネスワイヤ(英語)
Silver Event Partner to Showcase Expanding GaN
Device Portfolio and Advancements Powering Widest Range of Low to
High Power Solutions from Versatile SuperGaN SiPs to Game-Changing
2- and 3-Wheeled Electric Vehicle Systems
Silver Partner Transphorm, Inc. (Nasdaq: TGAN)—a global leader
in robust GaN power semiconductors—announced today that its APEC
2024 showcase will underscore the company’s continued leadership in
broad spectrum (low to high power) GaN power conversion. This
leadership role positions Transphorm as one of the only GaN
semiconductor companies making GaN’s performance advantages
accessible to higher power system manufacturers. Attendees can
visit Transphorm at Booth 1813 during the event on February 25 –
29.
This year, Transphorm will highlight major innovation milestones
to include the industry’s first 1200 V GaN-on-Sapphire device model
and leading short circuit robustness. The company’s versatile
SuperGaN® device portfolio will also be emphasized—to include
recently announced packages such as the TO-247-4L, TOLL, and TOLT
that round out a complete, flexible packaging selection for higher
power systems requiring different heatsinking configurations.
Lastly, on-site demonstrations will showcase the company’s
technology in a wide variety of groundbreaking power systems from
high performance uninterrupted and bi-directional power supplies to
disruptive solar energy microinverters as well as 2- and 3-wheeled
electric vehicle systems.
Transphorm’s ability to empower customers with superior GaN
solutions that outperform competitive options (i.e. e-mode GaN,
SiC, silicon) stems from the future-proofed SuperGaN platform,
which embraces and amplifies fundamental physics. Transphorm
manufactures a normally-off d-mode GaN technology in cascode. This
design configuration allows inherent platform phenomena to perform
to their greatest potential. These phenomena include the 2DEG GaN
HEMT Channel and the SiO2/Si gate interface (created by the
low-voltage MOSFET paired with Transphorm’s GaN HEMT). The
company’s recently released white paper outlining these advantages
can be downloaded here: https://bit.ly/dmodeadvwp.
One Core Platform, Crossing the Power Spectrum
Transphorm is the leading GaN power semiconductor company
differentiated by its technology’s:
Manufacturability: Vertically
integrated owning the EPI design, wafer process, and FET die
design.
Designability: Offering well-known,
industry standard packages and performance packages while
partnering with renowned global leaders in firmware (Microchip
Technology) and hardware integration (Weltrend Semiconductor) for
easy design in.
Drivability: Offering devices that are
driven like silicon and pair with off-the-shelf controllers and
drivers while requiring minimal external circuitry.
Reliability: Still leading the
industry with a current FIT rate of < 0.05 across more than 100
billion field hours of operation in low to high power
applications.
Transphorm today supports the largest range of power conversion
requirements (45 W to 10+ kW) across the widest range of power
applications. The company’s FET portfolio includes 650 V and 900 V
devices with 1200 V device(s) in development. These devices are
JEDEC and AEC-Q101 qualified, making them optimal solutions for
power adapters and computer PSUs through to broad industrial UPSs
and electric vehicle mobility systems. The mix of customer products
to be displayed at APEC underscore the broad usability of
Transphorm’s SuperGaN platform.
Speaking Engagements
Transphorm experts will educate audiences on site via the
following presentations:
High Power GaN Devices and Applications
Professional Education Seminar (S17): February 26 at 8:30 a.m.
Speakers: Davide Bisi, Member of Technical Staff, Office of the
CTO; Philip Zuk, SVP Business Development and Marketing; Tushar
Dhayagude, VP of Worldwide Sales and FAE
The SuperGaN Difference: Advantages of
Normally-Off d-Mode GaN Power Semiconductors Exhibitor Seminar:
February 27 at 2:15 p.m. Speaker: Jenny Cortez, Technical Sales
Manager
GaN Four Quadrant Switch Technology for
Microinverters and Motor-Drives Industry Session (IS16.2): February
28 at 1:55 p.m. Speaker: Geetak Gupta, Member of Technical Staff,
Office of the CTO
15-mΩ GaN Device with 5-μs Short-Circuit
Withstand Time Industry Session (IS22.6): February 29 at 10:55 a.m.
Speaker: Davide Bisi, PhD, Member of Technical Staff, Office of the
CTO
Meet With Us
To schedule a meeting with Transphorm during the show, please
contact vipin.bothra@transphormusa.com.
About Transphorm
Transphorm, Inc., a global leader in the GaN revolution, designs
and manufactures high performance and high reliability GaN
semiconductors for high voltage power conversion applications.
Having one of the largest Power GaN IP portfolios of more than
1,000 owned or licensed patents, Transphorm produces the industry’s
first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor
devices. The Company’s vertically integrated device business model
allows for innovation at every development stage: design,
fabrication, device, and application support. Transphorm’s
innovations move power electronics beyond the limitations of
silicon to achieve over 99% efficiency, 50% more power density and
20% lower system cost. Transphorm is headquartered in Goleta,
California and has manufacturing operations in Goleta and Aizu,
Japan. For more information, please visit www.transphormusa.com.
Follow us on Twitter @transphormusa and WeChat at
Transphorm_GaN.
The SuperGaN mark is a registered trademark of Transphorm, Inc.
All other trademarks are the property of their respective
owners.
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version on businesswire.com: https://www.businesswire.com/news/home/20240206699898/en/
Heather Ailara +1.973.567.6040
heather.ailara@transphormusa.com
Transphorm (NASDAQ:TGAN)
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