Mitsubishi Electric to Ship Samples of S1-Series HVIGBT Module
2024年12月23日 - 11:10AM
ビジネスワイヤ(英語)
Designed for extra powerful and efficient
inverter systems of railways, electric power systems and more
Mitsubishi Electric Corporation (TOKYO: 6503) announced today
that it will begin shipping samples of two new S1-Series High
Voltage Insulated Gate Bipolar Transistor (HVIGBT) modules, both
rated at 1.7kV, for large industrial equipment such as railcars and
DC power transmitters from December 26. Thanks to proprietary
Insulated Gate Bipolar Transistor (IGBT) devices and insulation
structures, the new modules offer excellent reliability and low
power loss and thermal resistance, which are expected to increase
the reliability and efficiency of inverters in large industrial
equipment. Mitsubishi Electric’s 1.7kV HVIGBT modules, first
released in 1997 and highly regarded for their excellent
performance and high reliability, have been widely adopted for
inverters in power systems. The new S1-Series modules incorporate
Mitsubishi Electric’s proprietary Relaxed Field of Cathode (RFC)
diode, which increases the Reverse Recovery Safe Operating Area
(RRSOA) by 2.2 times compared to previous models for improved
inverter reliability. In addition, the use of an IGBT element with
a Carrier Stored Trench Gate Bipolar Transistor (CSTBT) structure
helps reduce both power loss and thermal resistance for more
efficient inverters. Furthermore, Mitsubishi Electric’s proprietary
insulation structure increases the insulation voltage resistance to
6.0kVrms, 1.5 times that of previous products, resulting in more
flexible insulation designs for compatibility with a wide range of
inverter types.
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Customer Inquiries Semiconductor & Device Marketing Dept. A
and Dept. B Mitsubishi Electric Corporation
www.MitsubishiElectric.com/semiconductors/
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Mitsubishi Electric Corporation Tel: +81-3-3218-2332
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