DENSO and Kyoto University Startup FLOSFIA will Develop Next-Gen Power Semiconductor Device for Electrified Vehicles
2018年1月5日 - 9:36AM
JCN Newswire (英)
DENSO Corporation, one of the world's largest automotive
suppliers, and FLOSFIA Inc., a tech startup spun from Kyoto
University, are partnering to develop a next-generation power
semiconductor device expected to reduce the energy loss, cost, size
and weight of inverters used in electrified vehicles (EVs). Through
the joint development project, the two companies aim to improve the
efficiency of EV power control units, a key to drive widespread EV
use, and usher in a future of safer, more sustainable mobility.
In addition to the joint development partnership, DENSO has
acquired new shares issued by FLOSFIA in its Series C funding
round.
Professor Shizuo Fujita at Kyoto University pioneered the
application of corundum structured gallium oxide (alpha-Ga2O3) for
use in semiconductors. Alpha-Ga2O3 semiconductors provide superior
performance to other semiconductors on the market. These
semiconductors have a wide bandgap of 5.3 eV and high electric
breakdown field strength, meaning they can better withstand high
voltage applications. alpha-Ga2O3 will replace today's current
silicon (Si) and silicon carbide (SiC) power semiconductors and
help further develop the technologies that make tomorrow's
electrified vehicles a reality.
Originally established at Kyoto University in 2011, FLOSFIA is a
world leader in R&D and commercializing alpha-Ga2O3. Aligning
with its vision to create the future of mobility through Connected,
Automated Drive, and Electrification technologies, DENSO became
interested in FLOSFIA's technology. The two will further research
and develop technology in high-voltage products for hybrid and
electric vehicles, including semiconductors.
Since 2007, DENSO has provided power control units (PCUs) for
hybrid and electric vehicles. PCUs use an inverter to control the
power supplied from the battery to the motor generator. To use
electric energy more efficiently, energy losses during the DC to AC
conversion by the inverter must be reduced, and so DENSO is
conducting R&D on low-loss power semiconductors.
Financial terms of the investment were not disclosed.
About FLOSFIA Inc.
FLOSFIA Inc., headquartered in Kyoto, Kyoto prefecture, Japan, is a
spin-off from a research of Kyoto University, specializing in
film-formation by mist chemical vapor deposition (CVD). Making use
of physical properties of gallium oxide (Ga2O3), FLOSFIA has
devoted to development of low-loss power devices. FLOSFIA succeeded
in a development of a Schottky Barrier Diode (SBD) with the lowest
specific on-resistance of any SBDs currently available on the
market (through an internal investigation), realizing technologies
linked to power loss reduction that is reduced up to 90 percent
less than before. Flosfia will now develop its own production lines
with a view to launching commercial production in 2018.FLOSFIA
produces a variety of thin films, enhancing MISTDRY technology,
achieving commercialization of power devices, and realizing
application of its technology to electrode materials, oxide
compounds with functional properties for electronic devices,
plating and polymers. For more information, go to
http://www.flosfia.com/.
About Denso
DENSO Corporation, headquartered in Kariya, Aichi prefecture,
Japan, is a leading global automotive supplier of advanced
technology, systems and components in the areas of thermal,
powertrain control, electronics and information and safety. Its
customers include all the world's major carmakers. Worldwide, the
company has more than 200 subsidiaries and affiliates in 38
countries and regions and employs nearly 140,000 people.
Consolidated global sales for the fiscal year ending March 31,
2014, totaled US$39.8 billion. Last fiscal year, DENSO spent 9
percent of its global consolidated sales on research and
development. DENSO common stock is traded on the Tokyo and Nagoya
stock exchanges. For more information, go to www.globaldenso.com,
or visit our media website at www.densomediacenter.com.
Source: Denso
Contact:
Sadayoshi Yokoyama, Toshiko Watanabe
DENSO CORPORATION
Phone: 81-566-25-5594
Fax: 81-566-25-4509
sadayoshi_yokoyama@denso.co.jp
toshiko_watanabe@denso.co.jp
Copyright 2018 JCN Newswire . All rights reserved.