Mitsubishi Electric and the University of Tokyo Quantify Factors for Reducing SiC Power Semiconductor Resistance by Two-Thirds
2017年12月5日 - 11:10AM
ビジネスワイヤ(英語)
Mitsubishi Electric Corporation (TOKYO:6503) and the University
of Tokyo announced today that they believe they are the first to
quantify the impacts of three electron-scattering mechanisms for
determining the resistance of silicon carbide (SiC) power
semiconductor devices in power semiconductor modules. They have
found that resistance under the SiC interface can be reduced by
two-thirds by suppressing electron scattering by the charges, a
discovery that is expected to help reduce energy consumption in
power equipment by lowering the resistance of SiC power
semiconductors.
Going forward, Mitsubishi Electric will continue refining the
design and specifications of its SiC metal-oxide-semiconductor
field-effect transistor (SiC MOSFET) to further lower the
resistance of SiC power semiconductor devices. This research
achievement was initially announced at The International Electron
Devices Meeting (IEDM2017) in San Francisco, California on December
4 (PST).
The impact that charges and atomic vibration have on electron
scattering under the SiC interface was revealed to be dominant in
Mitsubishi Electric’s analyses of fabricated devices. Electron
scattering focusing on atomic vibration was measured using
technology from the University of Tokyo. Although it has been
recognized that electron scatting under the SiC interface is
limited by three factors, namely, the roughness of the SiC
interface, the charges under the SiC interface and the atomic
vibration, the contribution of each factor had been unclear. A
planar-type SiC-MOSFET in which electrons conduct away from the SiC
interface to around several nano meters was fabricated to confirm
the impact of the charges. As a result, Mitsubishi Electric and the
University of Tokyo achieved an unprecedented confirmation that the
roughness of the SiC interface has little effect while charges
under the SiC interface and atomic vibration are dominant
factors.Compared with a previous planar-type SiC-MOSFET device,
resistance was reduced by two thirds owing to suppression of
electron scattering, which was achieved by making the electrons
conduct away from the charges under the SiC interface. The previous
planar-type device used for comparison has the same interface
structure as that of the SiC-MOSFET fabricated by Mitsubishi
Electric.
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